PART |
Description |
Maker |
APT46GA90JD40 |
High Speed PT IGBT Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation Microsemi, Corp.
|
APT32GU30K |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT40GP60B2DQ2G APT40GP60B2DQ2 |
POWER MOS 7 IGBT
|
Advanced Power Technolo... Advanced Power Technology
|
APT40GP60JDQ2 |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT40GP90JDQ2 |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT13GP120B APT13GP120BG APT13GP120S APT13GP120SG |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT40GP60J |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT11GP60BDQB |
POWER MOS 7 IGBT MOSFET
|
Advanced Power Technolo... Advanced Power Technology
|
APT75GP120JDQ3 |
POWER MOS 7 IGBT IGBT的功率MOS 7
|
Advanced Power Technology, Ltd.
|
APT13GP120K |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT25GP90B |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT75GP120J |
MOSFET POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|